VASSCAA-1: Proceedings of the First Vacuum and Surface Science Conference of Asia and Australia, Tokyo, Japan, September 8-10, 1999MURATA, Yoshitada; OKANO, Tatsuo; UOZUMI, Kiyohiko et al.Applied surface science. 2001, Vol 169-70, issn 0169-4332, 856 p.Conference Proceedings

Elementary excitations at doped polar semiconductor surfaces with carrier-depletion layersINAOKA, Takeshi.Applied surface science. 2001, Vol 169-70, pp 51-56, issn 0169-4332Conference Paper

Improvement of the PF ring vacuum systemHORI, Y.Applied surface science. 2001, Vol 169-70, pp 728-731, issn 0169-4332Conference Paper

Modeling of outgassing or pumping functions of the constituent elements such as chamber walls and high-vacuum pumpsYOSHIMURA, Nagamitsu.Applied surface science. 2001, Vol 169-70, pp 685-688, issn 0169-4332Conference Paper

Spin-polarized metastable deexcitation spectroscopy study of iron filmsYAMAUCHI, Y; KURAHASHI, M.Applied surface science. 2001, Vol 169-70, pp 236-240, issn 0169-4332Conference Paper

Transition to fixed final states in two-photon photoemission from adsorbate-metal systemsUEBA, H; MII, T.Applied surface science. 2001, Vol 169-70, pp 63-67, issn 0169-4332Conference Paper

Commissioning of surface chemistry end-station in BL23SU of SPring-8TERAOKA, Yuden; YOSHIGOE, Akitaka.Applied surface science. 2001, Vol 169-70, pp 738-741, issn 0169-4332Conference Paper

Ground-state properties of jellium metals with low electron densitiesOKAZAKI, K; TERAOKA, Y.Applied surface science. 2001, Vol 169-70, pp 48-50, issn 0169-4332Conference Paper

Structural study of Al deposited surface on Si(111)√3 × √3-AlHORIO, Yoshimi.Applied surface science. 2001, Vol 169-70, pp 104-108, issn 0169-4332Conference Paper

Proceedings/12th. International conference on metallurgical coatings, Los Angeles CA, 15-19 April 1985KRUTENAT, R. C.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1985, Vol 3, Num 6, pp 2219-2710, issn 0734-2101Conference Proceedings

Effect of rare-earth-doping on the magnetoresistive properties of sputtered Co-Ag alloy thin filmsTONOOKA, Kazuhiko; NISHIMURA, Okio.Applied surface science. 2001, Vol 169-70, pp 500-503, issn 0169-4332Conference Paper

Electron stimulated gas desorption from copper material and its surface analysisNISHIWAKI, Michiru; KATO, Shigeki.Applied surface science. 2001, Vol 169-70, pp 700-705, issn 0169-4332Conference Paper

Injected particle behavior in a thermal plasmaRAMASAMY, R; SELVARAJAN, V.Applied surface science. 2001, Vol 169-70, pp 617-621, issn 0169-4332Conference Paper

15th. International conference on metallurgical coatings. I, II, San Diego CA, U.S.A., April 11-15, 1988 = 15ème Conférence internationale sur les revêtements métallurgiques. I, II, San Diego CA, U.S.A., 11-15 Avril, 1988KRUTENAT, R. C.Surface & coatings technology. 1988, issn 0257-8972, 2Vol, XIV-575 p., III-384 p., [959 p.]Conference Proceedings

Argon gas pressure dependence of the properties of transparent conducting ZnO :Al films deposited on glass substratesIGASAKI, Yasuhiro; KANMA, Hirokazu.Applied surface science. 2001, Vol 169-70, pp 508-511, issn 0169-4332Conference Paper

Electrical and optical properties of InN films prepared by reactive sputteringSAITO, N; IGASAKI, Y.Applied surface science. 2001, Vol 169-70, pp 349-352, issn 0169-4332Conference Paper

Growth of Nb thin films on SiO₂BOQUAN LI; KOJIMA, Isao.Applied surface science. 2001, Vol 169-70, pp 371-374, issn 0169-4332Conference Paper

Optical, electrical and structural properties of amorphous SiCN:H films prepared by rf glow-discharge decompositionNAKAAKI, I; SAITO, N.Applied surface science. 2001, Vol 169-70, pp 468-471, issn 0169-4332Conference Paper

Adatom effective charge in morphology evolution on Si(111) surfaceLATYSHEV, A. V; MINODA, H; TANISHIRO, Y et al.Applied surface science. 1998, Vol 130-32, pp 60-66, issn 0169-4332Conference Paper

Adsorption and growth on nanostructured surfacesZEPPENFELD, P; DIERCKS, V; TÖLKES, C et al.Applied surface science. 1998, Vol 130-32, pp 484-490, issn 0169-4332Conference Paper

Atomic-layer selective deposition of silicon nitride on hydrogen-terminated Si surfacesYOKOYAMA, S; IKEDA, N; KAJIKAWA, K et al.Applied surface science. 1998, Vol 130-32, pp 352-356, issn 0169-4332Conference Paper

Competition between terrace and step nucleation : epitaxy of CaF₂ on vicinal Si(111) studied by atomic force microscopyWOLLSCHLÄGER, J; PIETSCH, H; KLUST, A et al.Applied surface science. 1998, Vol 130-32, pp 29-35, issn 0169-4332Conference Paper

Electronic characterization of Si/SiO₂ structure using photo-CVD SiO₂ thin film on atomically flat Si substrateMAIDA, O; YAMAMOTO, H; OKADA, N et al.Applied surface science. 1998, Vol 130-32, pp 214-220, issn 0169-4332Conference Paper

Fabrication and characterization of field effect transistors using donor and acceptor stacked layersIIZUKA, M; SHIRATORI, Y; KUNIYOSHI, S et al.Applied surface science. 1998, Vol 130-32, pp 914-918, issn 0169-4332Conference Paper

Hydrogen terminated Si(111) surface studied by RHEEDYAKOVLEV, N. L; SHUSTERMAN, Yu. V; MAKSYM, P. A et al.Applied surface science. 1998, Vol 130-32, pp 310-313, issn 0169-4332Conference Paper